IXYS Corp. has expanded its GenX3TM insulated gate bipolar transistor (IGBT) portfolio to 1,200 volts. These new IGBTs are manufactured using IXYS' GenX3TM IGBT process and utilize IXYS' advanced technology to provide lower saturation voltages, lower switching losses and higher surge current capabilities.
This new extension of GenX3TM IGBTs is a part of IXYS' growing product line aimed at high-voltage power conversion markets, including wind turbine and solar inverters, automatic voltage regulators and industrial battery chargers.
To accommodate optimum part selection, designers have a choice in selecting among three sub-classes denoted A3, B3 and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency and cost, according to the company.
Co-packed variants of these new devices are available with IXYS' HiPerFREDTM and SONIC-FRDTM, ultra-fast recovery diodes, providing exceptional fast recovery and soft switching characteristics.
For more information, visit ixys.com.
SOURCE: IXYS Corp.